DSAISS00017731.pdf by Infineon Technologies

Partial File Text Preliminary PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 1930 â 1990 MHz Description Features The PTF180101M is a 10-watt GOLDMOS FET device intended for EDGE a
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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