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    DSA0099889.pdf by RF Micro Devices

    • TA0012 TA0012 RF2123: New High Power, High Efficiency HBT GSM Power Amplifier ... efficiency is extremely important. Sixty percent total efficiency for a two-stage, 30dB gain more
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    gsm cellular power amplifier HBT transistor RF2123 TA0012 trw RF POWER TRANSISTOR trw rf transistor
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