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    AOTF4N60 datasheet by Alpha & Omega Semiconductor

    • High Voltage - 600V, 4A N-Channel MOSFET
    • Original
    • Yes
    • Active
    • EAR99
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    AOTF4N60 datasheet preview

    AOTF4N60 Frequently Asked Questions (FAQs)

    • The maximum junction temperature of the AOTF4N60 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
    • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, the heat sink should be mounted with a thermal interface material (TIM) to minimize thermal resistance. The PCB layout should also be designed to minimize thermal impedance.
    • The recommended gate drive voltage for the AOTF4N60 is between 10V and 15V. A higher gate drive voltage can reduce the on-state resistance, but it may also increase the switching losses.
    • To protect the AOTF4N60 from overvoltage and overcurrent, a voltage clamp or a transient voltage suppressor (TVS) can be used. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.
    • The recommended PCB layout for the AOTF4N60 includes a solid ground plane, a separate power plane for the drain, and a Kelvin connection for the source. The layout should also minimize the loop inductance and ensure a low-impedance path for the drain and source.
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