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    AOTF9N70 datasheet by Alpha & Omega Semiconductor

    • High Voltage - 700V, 9A N-Channel MOSFET
    • Original
    • Yes
    • Active
    • EAR99
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    AOTF9N70 datasheet preview

    AOTF9N70 Frequently Asked Questions (FAQs)

    • The maximum junction temperature of the AOTF9N70 is 175°C. It's essential to ensure that the device operates within this temperature range to prevent damage or degradation.
    • The thermal resistance of the AOTF9N70 can be calculated using the junction-to-case thermal resistance (RθJC) and the case-to-ambient thermal resistance (RθCA). The datasheet provides the RθJC value, and you can calculate RθCA based on the device's package and the system's thermal design.
    • The recommended gate drive voltage for the AOTF9N70 is between 10V and 15V. This ensures proper switching and minimizes the risk of damage or malfunction.
    • Yes, the AOTF9N70 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, gate drive requirements, and thermal management to ensure reliable operation.
    • To protect the AOTF9N70 from overvoltage and overcurrent, you can use a combination of voltage regulators, overvoltage protection (OVP) circuits, and current sensing and limiting circuits. Additionally, ensure that the device operates within its specified voltage and current ratings.
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