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    Part Img AUIRF7309QTR datasheet by International Rectifier

    • FETs - Arrays, Discrete Semiconductor Products, MOSFET P/N-CH 30V 4.7A 8SOIC
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
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    AUIRF7309QTR datasheet preview

    AUIRF7309QTR Frequently Asked Questions (FAQs)

    • The maximum operating junction temperature of AUIRF7309QTR is 175°C.
    • Yes, AUIRF7309QTR is designed for high-frequency switching applications up to 1 MHz, but it's recommended to consult the datasheet and application notes for specific guidance on layout, thermal management, and gate drive requirements.
    • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the junction temperature below the maximum rating. Additionally, consider using a thermally enhanced package or a heat sink with a high thermal conductivity.
    • The recommended gate drive voltage for AUIRF7309QTR is between 10 V and 15 V, with a maximum gate-source voltage of ±20 V. However, it's recommended to consult the datasheet and application notes for specific guidance on gate drive requirements and layout considerations.
    • Yes, AUIRF7309QTR can be used in a parallel configuration to increase current handling, but it's essential to ensure that the devices are properly matched, and the gate drive and layout are designed to minimize differences in switching times and voltage drops.
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