BAS316,135 datasheet by NXP Semiconductors

Description High-speed diode - Cd max.: 1.5 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1000@VR=75V nA; IFRM: 500 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd
Datasheet Type Original
RoHS Yes
Lifecycle Transferred
ECCN EAR99
HTS Code 8541.10.00.70
Schedule B 8541.10.00.70
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934054945135

BAS316,135 datasheet preview

The recommended operating voltage range for BAS316,135 is 1.65 V to 5.5 V.
To ensure the stability of the output voltage, it is recommended to use a minimum output capacitance of 1 μF and a maximum equivalent series resistance (ESR) of 1 Ω.
The maximum power dissipation for BAS316,135 is 250 mW.
Yes, BAS316,135 is suitable for high-temperature applications up to 125°C, but the output voltage may decrease with increasing temperature.
To protect BAS316,135 from overvoltage and undervoltage conditions, it is recommended to use a voltage supervisor or a reset IC to monitor the input voltage and reset the system if the voltage exceeds the recommended range.

BAS316,135 datasheet preview Download Datasheet