BAS321,115 datasheet by NXP Semiconductors

Description General purpose diode - C<sub>d</sub> max.: 2 pF; Configuration: single ; I<sub>F</sub> max: 250 mA; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 100@VR=200V nA; IFRM: 625 mA; t<sub>rr</sub> max: 50 ns; V<sub>F</sub>max: 1@IF=100mA mV; V<sub>R</sub> max: 200 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd
Datasheet Type Original
RoHS Yes
Pb Free Unknown
Lifecycle Transferred
ECCN EAR99
HTS Code 8541.10.00.70
Schedule B 8541.10.00.70
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BAS321T/R

BAS321,115 datasheet preview

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BAS321,115 Frequently Asked Questions (FAQs)

The recommended operating voltage range for BAS321,115 is 1.65 V to 5.5 V.
To ensure stability, it's recommended to use a minimum output capacitance of 1 μF and a maximum equivalent series resistance (ESR) of 1 Ω.
The maximum power dissipation for BAS321,115 is 250 mW.
Yes, BAS321,115 is suitable for high-temperature applications up to 125°C, but the output voltage and current may vary with temperature.
Use a voltage supervisor or a reset IC to monitor the input voltage and reset the system if it falls outside the recommended operating range.

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