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    BAS70 datasheet by Siemens

    • RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide
    • Original
    • No
    • Transferred
    • EAR99
    • 8541.10.00.70
    • 8541.10.00.70
    • Find it at Findchips.com
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    BAS70 datasheet preview

    BAS70 Frequently Asked Questions (FAQs)

    • The BAS70 can operate safely up to 150°C, but it's recommended to keep the junction temperature below 125°C for optimal performance and reliability.
    • It's essential to follow proper ESD handling procedures when working with BAS70 diodes, as they are sensitive to electrostatic discharge. Use ESD-safe materials, grounding straps, and follow proper handling techniques to prevent damage.
    • While the BAS70 is a high-speed diode, it's not recommended for switching applications due to its relatively high capacitance and reverse recovery time. Instead, consider using a dedicated switching diode like the BAS16 or BAS21.
    • To calculate the power dissipation of the BAS70, use the formula P = Vf * If, where P is the power dissipation, Vf is the forward voltage drop, and If is the forward current. Ensure you stay within the recommended maximum power dissipation rating of 500 mW.
    • The BAS70 has a relatively low capacitance of 1.5 pF, making it suitable for high-frequency applications up to several hundred MHz. However, for even higher frequencies, consider using a dedicated high-frequency diode like the BAS28 or BAS40.
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