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    Part Img BAS86,115 datasheet by NXP Semiconductors

    • Schottky barrier diode - C<sub>d</sub> max.: 8@VR=1V pF; Configuration: single ; I<sub>F</sub> max: 200 mA; I<sub>FSM</sub> max: 5000 A; I<sub>R</sub> max: 5@VR=40VA; V<sub>F</sub>max: 450@IF=10mA mV; V<sub>R</sub> max: 50 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.10.00.70
    • 8541.10.00.70
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    BAS86,115 datasheet preview

    BAS86,115 Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for BAS86,115 is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance.
    • To ensure reliability in high-temperature applications, it's essential to follow proper derating guidelines, use a suitable thermal design, and consider the device's power dissipation and thermal resistance.
    • Yes, BAS86,115 can be used in switching applications, but it's crucial to consider the device's switching characteristics, such as turn-on and turn-off times, and ensure that the application's requirements are within the device's specifications.
    • To handle ESD protection, it's recommended to follow proper handling and storage procedures, use ESD-protective equipment, and consider adding external ESD protection devices if necessary.
    • For optimal performance, it's recommended to follow proper PCB layout and design guidelines, such as minimizing lead lengths, using a solid ground plane, and ensuring good thermal conductivity.
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