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    Part Img BAT160C,115 datasheet by NXP Semiconductors

    • Schottky barrier double diodes - C<sub>d</sub> max.: 60@VR=4V pF; Configuration: dual c.c. ; I<sub>F</sub>: 1 A; I<sub>FSM</sub> max: 10 A; I<sub>R</sub> max: 0.35@VR=60V mA; V<sub>F</sub>max: 650@IF=1A mV; V<sub>R</sub>: 60 V; Package: SOT223 (SC-73); Container: Tape reel smd
    • Original
    • Yes
    • Transferred
    • EAR99
    • 8541.10.00.70
    • 8541.10.00.70
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    BAT160C,115 datasheet preview

    BAT160C,115 Frequently Asked Questions (FAQs)

    • The recommended operating temperature range for BAT160C,115 is -40°C to 125°C, but it can withstand storage temperatures from -55°C to 150°C.
    • To ensure proper biasing, connect the BAT160C,115 between the base and emitter of a transistor, and make sure the base-emitter voltage is within the recommended range of 0.65 V to 1.4 V.
    • The maximum current rating for the BAT160C,115 is 1 A, but it's recommended to operate it within the 0.1 A to 0.5 A range for optimal performance and reliability.
    • Yes, the BAT160C,115 is suitable for high-frequency applications up to 100 MHz, but it's essential to consider the parasitic capacitance and inductance when designing the circuit.
    • When designing with the BAT160C,115, consider the thermal resistance (Rth) of 25 K/W and ensure proper heat sinking to prevent overheating and maintain reliability.
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