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    Part Img BAT854CW,135 datasheet by NXP Semiconductors

    • Schottky barrier (double) diodes - C<sub>d</sub> max.: 20@VR=1V pF; Configuration: dual c.c. ; I<sub>F</sub> max: 200 mA; I<sub>FSM</sub> max: 1000 A; I<sub>R</sub> max: 0.5@VR=25VA; V<sub>F</sub>max: 420@IF=10mA mV; V<sub>R</sub> max: 40 V; Package: SOT323 (SC-70); Container: Tape reel smd
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    BAT854CW,135 datasheet preview

    BAT854CW,135 Frequently Asked Questions (FAQs)

    • The recommended operating temperature range for BAT854CW,135 is -40°C to 125°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade if operated outside this range.
    • To ensure proper biasing, follow the recommended voltage and current ratings specified in the datasheet. Typically, a voltage supply of 1.8V to 5.5V and a current limit of 1mA to 10mA are recommended. Additionally, ensure the input voltage is within the specified range to avoid damage or malfunction.
    • The maximum allowable power dissipation for BAT854CW,135 is 250mW, as specified in the datasheet. Exceeding this limit may cause the device to overheat, leading to reduced performance, reliability issues, or even permanent damage.
    • While BAT854CW,135 is designed for low-power, low-voltage applications, it can be used in high-frequency applications up to 100MHz. However, it's essential to consider the device's bandwidth, slew rate, and settling time to ensure it meets the specific application requirements.
    • To prevent electrostatic discharge (ESD) damage, follow proper handling and storage procedures. Use an ESD wrist strap or mat, and ensure the device is stored in an ESD-protected package. Additionally, consider adding external ESD protection components, such as TVS diodes, to the circuit design.
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