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    Part Img BAW101S,115 datasheet by NXP Semiconductors

    • High voltage double diode - C<sub>d</sub> max.: 2 pF; Configuration: dual isolated ; I<sub>F</sub> max: 250 mA; I<sub>FSM</sub> max: 4.5 A; I<sub>R</sub> max: 150@VR=250V nA; IFRM: 625 mA; t<sub>rr</sub> max: 50 ns; V<sub>F</sub>max: 1100@IF=100mA mV; V<sub>R</sub> max: 300 V; Package: SOT363 (SC-88); Container: Tape reel smd
    • Original
    • Yes
    • Transferred
    • EAR99
    • 8541.10.00.70
    • 8541.10.00.70
    • Find it at Findchips.com

    BAW101S,115 datasheet preview

    BAW101S,115 Frequently Asked Questions (FAQs)

    • A good PCB layout for BAW101S,115 involves keeping the input and output traces short and symmetrical, using a solid ground plane, and placing the device close to the antenna. A 4-layer PCB with a dedicated ground plane is recommended.
    • The choice of antenna depends on the frequency band, operating environment, and size constraints. NXP provides a range of antenna options, including internal antennas, external antennas, and antenna modules. Consult the NXP antenna selection guide for more information.
    • The BAW101S,115 can handle up to 30 dBm (1W) of input power. However, it's recommended to operate within the specified maximum input power of 20 dBm (0.1W) to ensure reliable performance and prevent damage.
    • Impedance matching is critical for optimal performance. Use a Smith chart or impedance matching software to design a matching network that matches the device's input impedance (typically 50 ohms) to the antenna's impedance. NXP provides a matching network design guide for reference.
    • The BAW101S,115 has a maximum operating temperature of 125°C. Ensure good thermal conductivity by using a heat sink or thermal pad, and avoid exposing the device to high temperatures during soldering or reflow processes.
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