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    Part Img BAW156,215 datasheet by NXP Semiconductors

    • Low-leakage double diode - C<sub>d</sub> max.: 3 pF; Configuration: dual c.a. ; I<sub>F</sub> max: 160 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 5@VR=75V nA; IFRM: 500 mA; t<sub>rr</sub> max: 3000 ns; V<sub>F</sub>max: 1@IF=10mA mV; V<sub>R</sub> max: 75 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
    • Original
    • Yes
    • Transferred
    • EAR99
    • 8541.10.00.70
    • 8541.10.00.70
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    BAW156,215 datasheet preview

    BAW156,215 Frequently Asked Questions (FAQs)

    • A symmetrical layout with a solid ground plane and minimal track lengths is recommended. The device should be placed close to the antenna, and the RF traces should be kept short and wide to minimize losses.
    • Use a network analyzer to measure the impedance of the antenna and the BAW156,215. Then, use a Smith chart to design a matching network that transforms the antenna impedance to the device's input impedance.
    • The maximum power handling of the BAW156,215 is 2W. Exceeding this power may cause damage to the device or affect its performance.
    • Yes, the BAW156,215 can be used in switching applications, but it's essential to ensure that the device is properly biased and that the switching frequency is within the device's operating range.
    • Use a signal generator and a spectrum analyzer to test the device's performance. Check for proper biasing, correct PCB layout, and ensure that the device is not overheating. Consult the datasheet and application notes for troubleshooting guidelines.
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