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    Part Img BAW567DW-7-F datasheet by Diodes Incorporated

    • DIODE SWITCHING DUAL-DUAL COMMON-CATHODE/ANODE 75V 150mA-Io 200mW 4ns-trr SOT-363 3K/REEL
    • Original
    • Yes
    • Yes
    • Active
    • EAR99
    • 8541.10.00.70
    • 8541.10.00.70
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    BAW567DW-7-F datasheet preview

    BAW567DW-7-F Frequently Asked Questions (FAQs)

    • A thermal pad on the bottom of the package is recommended to be connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
    • The device requires a bias voltage of 5V to 15V, and the recommended bias current is 1mA to 10mA. Ensure the bias voltage is stable and noise-free to achieve optimal performance.
    • The maximum power dissipation for the BAW567DW-7-F is 250mW. Ensure the device is operated within this limit to prevent overheating and damage.
    • Yes, the BAW567DW-7-F is suitable for high-frequency applications up to 5GHz. However, ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
    • The BAW567DW-7-F has an internal ESD protection diode, but it's still recommended to follow proper ESD handling procedures during assembly and handling to prevent damage.
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