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    Part Img BC869,115 datasheet by NXP Semiconductors

    • PNP medium power transistor; 20 V, 1 A - Complement: BC868 ; fT min: 40 MHz; hFE max: 375 ; hFE min: 100 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 20 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd
    • Original
    • Yes
    • Transferred
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
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    BC869,115 datasheet preview

    BC869,115 Frequently Asked Questions (FAQs)

    • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 mm clearance around the device for airflow and heat dissipation.
    • Implement a heat sink or thermal interface material, and ensure good airflow around the device. Consider using a thermal pad or thermal tape to improve heat transfer.
    • The maximum allowed voltage on the input pins is 6.5V. Exceeding this voltage may damage the device.
    • Yes, the BC869,115 is suitable for battery-powered devices due to its low quiescent current (IQ) and low dropout voltage (VDO). However, consider the device's power consumption and battery life requirements.
    • Check the input voltage, output load, and feedback resistors. Verify that the output capacitor is properly sized and placed close to the device. Consult the datasheet and application notes for guidance.
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