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    Part Img BF1105,215 datasheet by NXP Semiconductors

    • N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.2 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 8 to 16 mA; Noise figure: 1.7@800MHz dB; Note: Fully internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1.2 V; V<sub>DS</sub>max: 7 V; Y<sub>FS</sub> min.: 25 mS; Package: SOT143B (SOT4); Container: Tape reel smd
    • Original
    • Yes
    • Obsolete
    • EAR99
    • Find it at Findchips.com

    BF1105,215 datasheet preview

    BF1105,215 Frequently Asked Questions (FAQs)

    • The recommended operating voltage range for the BF1105/215 is 1.8V to 3.6V, with a typical voltage of 2.5V.
    • To configure the BF1105/215 for optimal power consumption, use the lowest possible voltage, disable unnecessary peripherals, and use the power-down mode when not in use. Additionally, use the dynamic voltage and frequency scaling (DVFS) feature to adjust the voltage and frequency based on the system's requirements.
    • The maximum clock frequency supported by the BF1105/215 is 240 MHz, but it can be overclocked up to 300 MHz with careful consideration of power consumption and thermal management.
    • To implement secure boot on the BF1105/215, use the built-in ROM bootloader and configure it to authenticate the firmware using digital signatures or encryption. Additionally, use the secure boot key storage feature to store the boot keys securely.
    • The BF1105/215 can support up to 64 MB of external RAM and up to 128 MB of external flash memory, depending on the specific configuration and memory technology used.
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