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    Part Img BF1105R,215 datasheet by NXP Semiconductors

    • N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.2 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 8 to 16 mA; Noise figure: 1.7@800MHz dB; Note: Fully internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1.2 V; V<sub>DS</sub>max: 7 V; Y<sub>FS</sub> min.: 25 mS; Package: SOT143B (SOT4); Container: Tape reel smd
    • Original
    • Yes
    • Obsolete
    • EAR99
    • 8541.21.00
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    BF1105R,215 datasheet preview

    BF1105R,215 Frequently Asked Questions (FAQs)

    • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the input and output tracks as short as possible and use a common mode choke to reduce EMI.
    • Use a minimum output capacitance of 10uF and ensure the output voltage is within the specified range. Also, use a soft-start circuit to prevent inrush currents during startup.
    • The maximum ambient temperature for the BF1105R,215 is 85°C. However, the device can operate up to 125°C with derating.
    • Yes, the BF1105R,215 is suitable for high-reliability applications. It has a high MTBF (Mean Time Between Failures) and is qualified according to the AEC-Q100 standard.
    • Use an overvoltage protection (OVP) circuit and an undervoltage lockout (UVLO) circuit to protect the device from voltage transients and faults.
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