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    Part Img BF1105WR,135 datasheet by NXP Semiconductors

    • N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.2 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 8 to 16 mA; Noise figure: 1.7@800MHz dB; Note: Fully internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1.2 V; V<sub>DS</sub>max: 7 V; Y<sub>FS</sub> min.: 25 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Obsolete
    • EAR99
    • Find it at Findchips.com

    BF1105WR,135 datasheet preview

    BF1105WR,135 Frequently Asked Questions (FAQs)

    • A good PCB layout is crucial for the BF1105WR,135. Ensure a solid ground plane, keep the RF traces short and away from digital lines, and use a common mode choke for the power supply. NXP provides a recommended layout in their application notes.
    • The antenna design is critical for the BF1105WR,135. Use a 50-ohm impedance antenna, and consider a quarter-wave monopole or a dipole antenna. NXP provides antenna design guidelines in their application notes. You can also use antenna simulation software to optimize the design.
    • The BF1105WR,135 has an operating temperature range of -40°C to +85°C. However, the device's performance may degrade at extreme temperatures. Ensure proper thermal management and consider temperature compensation in your design.
    • The BF1105WR,135 has a low-power mode that can be enabled by setting the appropriate registers. You can also use the device's shutdown mode to reduce power consumption. Consult the datasheet and application notes for more information on power management.
    • The BF1105WR,135 has built-in ESD protection, but it's still essential to follow proper ESD handling procedures during manufacturing and assembly. For latch-up prevention, ensure that the device is powered up and down correctly, and avoid voltage spikes on the power supply lines.
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