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    Part Img BF1201WR,115 datasheet by NXP Semiconductors

    • N-channel dual-gate PoLo MOS-FETs - CIS TYP: 2.6 pF; COS: 0.9 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 11 to 19 mA; Noise figure: 1.9@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; V<sub>DS</sub>max: 10 V; Y<sub>FS</sub> min.: 23 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd
    • Original
    • Yes
    • Obsolete
    • EAR99
    • 8541.21.00.75
    • 8541.21.00.80
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    BF1201WR,115 datasheet preview

    BF1201WR,115 Frequently Asked Questions (FAQs)

    • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the RF traces as short as possible and use 50-ohm impedance matching to minimize signal reflections.
    • Use the lowest possible supply voltage (1.8V) and adjust the bias current to the minimum required for your application. Disable unnecessary blocks and use the power-down mode when not transmitting or receiving.
    • The BF1201WR,115 is rated for operation from -40°C to +85°C. However, it's recommended to operate within the -20°C to +70°C range for optimal performance and reliability.
    • Use a shielded enclosure, keep the device away from other RF sources, and ensure proper grounding and decoupling. Follow the recommended PCB layout and use EMI filters if necessary.
    • The typical current consumption during transmission is around 120mA, and during reception, it's around 50mA. However, this can vary depending on the specific application and operating conditions.
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