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    Part Img BF1202R,215 datasheet by NXP Semiconductors

    • N-channel dual-gate PoLo MOS-FETs - CIS TYP: 1.7 pF; COS: 0.85 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 8 to 16 mA; Noise figure: 1.1@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; V<sub>DS</sub>max: 10 V; Y<sub>FS</sub> min.: 25 mS; Package: SOT143R (SC-61B); Container: Tape reel smd
    • Original
    • Yes
    • Obsolete
    • EAR99
    • Find it at Findchips.com

    BF1202R,215 datasheet preview

    BF1202R,215 Frequently Asked Questions (FAQs)

    • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the RF traces as short as possible and use 50-ohm impedance matching to minimize signal reflections.
    • Use a quarter-wavelength monopole antenna or a dipole antenna with a length of around 17mm for optimal performance. Ensure the antenna is placed at least 10mm away from the PCB edge and other components.
    • The device can operate from -40°C to +85°C, but the performance may degrade above 70°C. Ensure proper thermal management and heat dissipation to maintain optimal performance.
    • Use the lowest possible supply voltage (1.8V), reduce the transmit power, and use the built-in power-saving modes (e.g., sleep mode, standby mode). Additionally, optimize the firmware to minimize current consumption during idle periods.
    • Use a 26 MHz crystal oscillator with a load capacitance of 12-15 pF for optimal performance. Ensure the oscillator is placed close to the device and the traces are as short as possible.
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