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    Part Img BF1212R,215 datasheet by NXP Semiconductors

    • N-channel dual-gate MOS-FETs - CIS TYP: 1.7 pF; COS: 0.9 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 8 to 16 mA; Noise figure: 1.1@800MHz dB; Note: Partly internal bias ; -V(P)GS MAX: 1 V; V<sub>DS</sub>max: 6 V; Y<sub>FS</sub> min.: 28 mS; Package: SOT143R (SC-61B); Container: Tape reel smd
    • Original
    • Yes
    • Obsolete
    • EAR99
    • 8541.21.00.75
    • 8541.21.00.80
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    BF1212R,215 datasheet preview

    BF1212R,215 Frequently Asked Questions (FAQs)

    • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the input and output tracks as short as possible and use a common mode choke to reduce EMI.
    • Use a thermally stable voltage regulator, ensure good thermal conductivity between the device and the PCB, and consider using a thermal pad or heat sink if the device will be operating at high temperatures.
    • The noise figure is primarily affected by the quality of the input matching network, the device's internal noise sources, and the output impedance. Ensure proper impedance matching and use high-quality components to minimize noise.
    • Use a low-dropout voltage regulator, optimize the biasing network, and consider using a power-down mode or dynamic voltage scaling to reduce power consumption during idle periods.
    • Use ESD protection diodes on the input and output pins, ensure a low-impedance path to ground, and consider using a TVS (transient voltage suppressor) diode for additional protection.
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