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    BF513 datasheet by NXP Semiconductors

    • BF513 - N-channel silicon field-effect transistors - CRS: 0.4 pF; IDSS: 10 to 18 mA; IG: 10 mA; Kind: RF stages FM portables, car radios, main radios and mixer stages ; -V(P)GS: typ. 3 V; VDSmax: 20 V; YFS: 7 ms
    • Original
    • Yes
    • Yes
    • Obsolete
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    BF513 datasheet preview

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