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    Part Img BGY887B,112 datasheet by NXP Semiconductors

    • BGY887 - RF/Microwave Amplifier, 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, SOT-115J, 7 PIN
    • Original
    • Yes
    • Obsolete
    • 8542.33.00.01
    • 8542.33.00.00
    • Find it at Findchips.com
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    BGY887B,112 datasheet preview

    BGY887B,112 Frequently Asked Questions (FAQs)

    • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the RF traces as short as possible and use 50-ohm impedance matching to minimize signal reflections.
    • Ensure good thermal conductivity by using a heat sink or thermal pad, and avoid blocking airflow around the device. Operate the device within the specified temperature range of -40°C to 125°C.
    • Power up the device in the following sequence: VCC, then VBAT, and finally enable the RF signal. This ensures proper initialization and minimizes the risk of latch-up or damage.
    • Use the device's built-in power-saving features, such as the low-power mode and power-down mode. Optimize the RF output power, and consider using a DC-DC converter to reduce power consumption.
    • Keep the RF pins as short as possible, and use a 50-ohm impedance-matched transmission line. Avoid vias and right-angle bends near the RF pins, and use a ground plane to minimize radiation.
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