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    Part Img BGY888,112 datasheet by NXP Semiconductors

    • BGY888 - RF/Microwave Amplifier, 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, SOT-115J, 7 PIN
    • Original
    • Yes
    • Obsolete
    • 8542.33.00.01
    • 8542.33.00.00
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    BGY888,112 datasheet preview

    BGY888,112 Frequently Asked Questions (FAQs)

    • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the RF signal traces as short as possible and use 50-ohm impedance matching to minimize signal reflections.
    • The BGY888,112 requires a 3.3V power supply and a bias current of around 10mA. Ensure the voltage regulator is stable and decoupled with capacitors to minimize noise and ripple.
    • The BGY888,112 can handle up to 30dBm (1W) of input power. Exceeding this limit may cause damage to the device or affect its performance.
    • Use the device's built-in tuning capabilities and adjust the external matching components to optimize the device for the desired frequency band. Consult the datasheet and application notes for guidance.
    • The typical noise figure of the BGY888,112 is around 2.5dB. This can vary depending on the specific application, frequency band, and operating conditions.
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