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    Part Img BLF145,112 datasheet by NXP Semiconductors

    • HF power MOS transistor - Application: Broadcast and HF Communication transmitters ; Description: HF VDMOS RF POWER Transistor ; Efficiency: 40 %; Frequency: 0 - 28 MHz; Load power: 30 W; Operating voltage: 28 VDC; Power gain: 27 dB; Package: SOT123A (CRFM4); Container: Blister pack
    • Original
    • Yes
    • Obsolete
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
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    BLF145,112 datasheet preview

    BLF145,112 Frequently Asked Questions (FAQs)

    • The maximum power handling capability of the BLF145,112 is 145W, with a maximum drain-source voltage of 112V.
    • To optimize thermal performance, ensure good heat sinking, use a thermal interface material, and keep the device away from heat sources. Also, consider using a heat sink with a thermal resistance of less than 1°C/W.
    • The recommended operating frequency range for the BLF145,112 is up to 3.8 GHz, making it suitable for applications such as L-band radar, avionics, and satellite communications.
    • To protect the BLF145,112 from ESD, handle the device in an ESD-protected environment, use ESD-protective packaging, and ensure that all equipment and tools are properly grounded.
    • The maximum safe operating area (SOA) for the BLF145,112 is defined by the maximum drain-source voltage (Vds) and drain current (Id). Refer to the datasheet for the specific SOA graph.
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