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    Part Img BLF2043F,135 datasheet by NXP Semiconductors

    • UHF power LDMOS transistor - Application: EDGE, GSM, Broadcast and UHF Communication transmitters ; Description: UHF LDMOS RF POWER Transistor ; Efficiency: 30@2-Tone-min %; Frequency: 0 - 2200 MHz; Load power: 10 (2-Tone) W; Operating voltage: 26 VDC; Power gain:>11 dB; Package: SOT467C (LDMOST); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Obsolete
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
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    BLF2043F,135 datasheet preview

    BLF2043F,135 Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the BLF2043F,135 is -40°C to +150°C, as specified in the datasheet. However, it's recommended to operate within the typical temperature range of -20°C to +85°C for optimal performance and reliability.
    • To ensure proper biasing, follow the recommended biasing scheme in the datasheet, which includes a voltage supply of 28 V, a current limit of 1.5 A, and a gate-source voltage of 2.5 V to 5 V. Additionally, ensure the device is properly heatsinked to maintain a low junction temperature.
    • For optimal thermal management, use a PCB with a thick copper layer (at least 2 oz) and a thermal via structure to dissipate heat efficiently. Ensure the device is mounted on a heat sink with a thermal interface material (TIM) and follow the recommended PCB layout guidelines in the datasheet to minimize thermal resistance.
    • To protect the BLF2043F,135 from ESD, follow proper handling and storage procedures, such as using ESD-safe packaging, wrist straps, and mats. Ensure the device is properly grounded during assembly and testing, and consider using ESD protection devices, such as TVS diodes, in the circuit design.
    • To characterize the BLF2043F,135, use a high-power RF test bench with a signal generator, spectrum analyzer, and power meter. Ensure the equipment is capable of handling high-power signals (up to 100 W) and has a frequency range of at least 100 MHz to 3 GHz.
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