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    Part Img BLF244,112 datasheet by NXP Semiconductors

    • VHF power MOS transistor - Application: Broadcast and VHF Communication transmitters ; Description: VHF VDMOS RF POWER Transistor ; Efficiency: 65 %; Frequency: 175 MHz; Load power: 15 W; Operating voltage: 28 VDC; Power gain: 17 dB; Package: SOT123A (CRFM4); Container: Blister pack
    • Original
    • Yes
    • Obsolete
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
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    BLF244,112 datasheet preview

    BLF244,112 Frequently Asked Questions (FAQs)

    • The maximum operating frequency of the BLF244,112 is 1400 MHz.
    • The typical output power of the BLF244,112 is 112 W at 915 MHz and 140 W at 2450 MHz.
    • The thermal resistance of the BLF244,112 is 0.5°C/W (junction-to-case) and 10°C/W (junction-to-ambient).
    • The recommended PCB layout for the BLF244,112 involves using a 4-layer PCB with a solid ground plane, and placing the device near the edge of the board to minimize thermal resistance.
    • To optimize the performance of the BLF244,112, ensure proper thermal management, use a low-loss PCB material, and optimize the input and output matching networks for maximum power transfer.
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