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    Part Img BLF369,112 datasheet by NXP Semiconductors

    • Multi-use VHF power LDMOS transistor - Description: VHF LDMOS POWER Transistor ; Efficiency: 60 %; Frequency band: 225 GHz; Output power: 500 W; Package material: SOT800-2 ; Power gain: 19 dB; Package: SOT800-2 (LDMOST); Container: Bulk Pack
    • Original
    • Yes
    • Obsolete
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
    • Find it at Findchips.com

    BLF369,112 datasheet preview

    BLF369,112 Frequently Asked Questions (FAQs)

    • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the RF signal traces short and away from the DC power traces. Use a common mode choke or a ferrite bead to filter the DC power supply.
    • Optimize the output power and efficiency by adjusting the input impedance, output impedance, and biasing conditions. Use a load-pull analysis to find the optimal impedance matching. Adjust the bias voltage and current to achieve the desired output power and efficiency.
    • For high-power applications, a heat sink with a thermal conductivity of at least 1 W/m-K is recommended. Ensure good thermal contact between the device and the heat sink using a thermal interface material. Forced air cooling or liquid cooling can also be used for high-power applications.
    • Monitor the device temperature using a thermocouple or a thermal sensor. Implement a thermal shutdown circuit to turn off the device when the temperature exceeds a certain threshold. Ensure good thermal design and heat sinking to prevent thermal runaway and overheating.
    • Handle the device with an anti-static wrist strap or mat. Store the device in an anti-static bag or container. Use an ESD-protected workstation and follow proper ESD handling procedures to prevent damage to the device.
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