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    Part Img BLF3G21-30,112 datasheet by NXP Semiconductors

    • UHF power LDMOS transistor - Application: PHS ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 35@CW20@PHS %; Frequency: HF - 2200 MHz; Load power: 30 (CW) / 10 (PHS) W; Operating voltage: 26 VDC; Power gain: 13.5 (CW) / 16 (PHS) dB; Package: SOT467C (LDMOST); Container: Blister pack
    • Original
    • Yes
    • Transferred
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
    • Find it at Findchips.com

    BLF3G21-30,112 datasheet preview

    BLF3G21-30,112 Frequently Asked Questions (FAQs)

    • The maximum power handling capability of the BLF3G21-30,112 is 30W, but it's recommended to derate the power handling to ensure reliable operation and prevent overheating.
    • To optimize impedance matching, use a Smith chart or impedance matching software to design a matching network that ensures a good VSWR (Voltage Standing Wave Ratio) and maximum power transfer. The datasheet provides a recommended matching circuit, but you may need to adjust it based on your specific application and PCB layout.
    • The recommended operating temperature range for the BLF3G21-30,112 is -40°C to +85°C. However, the device can operate up to +125°C for short periods, but this may affect its reliability and lifespan.
    • To prevent thermal runaway and overheating, ensure good thermal design and heat dissipation in your PCB layout. Use a heat sink or thermal pad, and keep the device away from other heat sources. Monitor the device's temperature and adjust the power handling accordingly.
    • The typical noise figure of the BLF3G21-30,112 is around 0.5 dB, but this can vary depending on the frequency, biasing, and operating conditions. Consult the datasheet and application notes for more information.
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