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    BLF3G21-6 datasheet by NXP Semiconductors

    • BLF3G21-6 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-2, FET RF Power
    • Original
    • Yes
    • Obsolete
    • EAR99
    • Find it at Findchips.com

    BLF3G21-6 datasheet preview

    BLF3G21-6 Frequently Asked Questions (FAQs)

    • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the RF signal traces short and away from digital signals. Use a 50-ohm microstrip line for the RF output.
    • Use a high-quality, low-loss PCB material and ensure the device is properly matched to the load impedance. Also, consider using a frequency-selective component, such as a filter or a resonator, to optimize performance.
    • The BLF3G21-6 can handle up to 6W of continuous power. However, it's essential to ensure proper heat sinking and thermal management to prevent overheating and damage.
    • Optimize the input and output matching networks, use a high-Q output capacitor, and ensure the device is operated within the recommended voltage and current ranges. Additionally, consider using a DC-DC converter to optimize the power supply.
    • Use a reflow soldering process with a peak temperature of 260°C (500°F) and a dwell time of 20-30 seconds. Ensure the device is properly aligned and secured to the PCB during assembly.
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