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    Part Img BLF548,112 datasheet by NXP Semiconductors

    • UHF push-pull power MOS transistor - Application: Broadcast, PMR and UHF Communication transmitters ; Description: UHF VDMOS RF POWER Transistor ; Efficiency: 55 %; Frequency: 500 MHz; Load power: 150 W; Operating voltage: 28 VDC; Power gain: 11 dB; Package: SOT262A2 (CDFM4); Container: Bulk Pack
    • Original
    • Yes
    • Obsolete
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
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    BLF548,112 datasheet preview

    BLF548,112 Frequently Asked Questions (FAQs)

    • NXP provides a recommended PCB layout in the application note AN11561, which includes guidelines for component placement, trace routing, and grounding to minimize parasitic effects and ensure optimal performance.
    • The biasing network depends on the specific application and frequency range. NXP provides a biasing network design tool and guidelines in the application note AN11561 to help engineers choose the correct components and values for their design.
    • The maximum power handling capability of the BLF548,112 is dependent on the operating frequency, voltage, and temperature. According to the datasheet, the device can handle up to 200 W of peak power, but it's essential to consult the application note AN11561 for specific guidelines on power handling and thermal management.
    • To ensure stability and prevent oscillations, it's crucial to follow the guidelines in the application note AN11561 for component selection, PCB layout, and biasing network design. Additionally, engineers should simulate their design using tools like NXP's MMIC Design Kit or third-party software to identify potential stability issues.
    • NXP provides guidelines for test and measurement procedures in the application note AN11561, including setup and calibration of test equipment, measurement techniques, and data analysis. Engineers should also consult the datasheet and relevant industry standards for specific testing requirements.
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