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    Part Img BLF647PS,112 datasheet by NXP Semiconductors

    • BLF647PS - BLF647PS - Broadband power LDMOS transistor
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • Find it at Findchips.com

    BLF647PS,112 datasheet preview

    BLF647PS,112 Frequently Asked Questions (FAQs)

    • The maximum operating frequency of the BLF647PS,112 is 7 GHz, making it suitable for high-frequency applications such as radar, satellite communications, and microwave systems.
    • To optimize thermal performance, ensure proper heat sinking, use a thermal interface material (TIM) between the device and heat sink, and maintain a low thermal resistance (Rth) of around 1.5°C/W. Additionally, operate the device within the recommended temperature range (TJ = -40°C to +150°C) and avoid overheating.
    • For optimal performance, use a 4-layer PCB with a solid ground plane, keep the signal traces short and wide, and avoid vias and thermal vias near the device. Also, ensure proper decoupling and bypassing of the power supply lines, and follow the recommended pinout and footprint layout.
    • To handle the high voltage and current requirements, use a suitable power supply with a high voltage rating (up to 50V) and a current rating of at least 1A. Ensure proper voltage regulation and filtering to minimize noise and ripple. Additionally, use a suitable heatsink and thermal management system to prevent overheating.
    • The BLF647PS,112 is sensitive to electrostatic discharge (ESD). Handle the device with ESD-protective equipment, such as wrist straps and mats, and follow proper ESD handling procedures. Avoid touching the device pins or exposing them to static electricity, and use ESD-protected packaging and storage.
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