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    Part Img BLF878,112 datasheet by NXP Semiconductors

    • UHF power LDMOS transistor, SOT979A (CDFM2), Bulk Pack
    • Original
    • Yes
    • Obsolete
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
    • Find it at Findchips.com
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    BLF878,112 datasheet preview

    BLF878,112 Frequently Asked Questions (FAQs)

    • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the RF traces short and away from the digital lines. Use a common mode filter or a Pi-filter to reduce EMI.
    • Optimize the output power and efficiency by adjusting the bias voltage, output matching network, and load impedance. Use a load-pull analysis to find the optimal load impedance for maximum power and efficiency.
    • For high-power applications, a heat sink with a thermal conductivity of at least 1 W/m-K is recommended. Ensure good thermal contact between the device and the heat sink using a thermal interface material.
    • Prevent oscillations by ensuring a stable DC bias, using a low-pass filter at the output, and adding a series resistor to the gate of the transistor. Also, ensure the PCB layout is well-designed to minimize parasitic inductances and capacitances.
    • The maximum safe operating temperature for the BLF878,112 is 150°C. Ensure the device is operated within the recommended temperature range to prevent thermal damage.
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