The maximum power dissipation of the BLF888A,112 is 350 W. However, this value can vary depending on the operating frequency, voltage, and cooling conditions.
To optimize the biasing of the BLF888A,112 for maximum efficiency, it is recommended to use a bias voltage of around 28-30 V and a quiescent current of around 100-150 mA. Additionally, the device should be operated in Class AB mode to achieve the best efficiency.
For optimal performance and thermal management, it is recommended to use a multi-layer PCB with a large ground plane and a thermal pad connected to the heat sink. The device should be mounted on a heat sink with a thermal resistance of less than 1°C/W to ensure reliable operation.
To protect the BLF888A,112 from overvoltage and overcurrent, it is recommended to use a voltage regulator with overvoltage protection and a current limiter. Additionally, a fuse or a current-sensing resistor can be used to detect overcurrent conditions and disconnect the power supply.
The maximum operating frequency of the BLF888A,112 is 2.2 GHz. However, the device can be operated at higher frequencies with reduced power output and efficiency.
BLF888A,112 datasheet
by NXP Semiconductors
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