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    Part Img BLF888B,112 datasheet by NXP Semiconductors

    • BLF888B - UHF power LDMOS transistor, SOT539A Package, Standard Marking, IC'S Tube - DSC Bulk Pack
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • Find it at Findchips.com

    BLF888B,112 datasheet preview

    BLF888B,112 Frequently Asked Questions (FAQs)

    • The maximum operating frequency of the BLF888B,112 is 3.8 GHz, but it's recommended to operate it at a maximum frequency of 3.5 GHz for optimal performance and reliability.
    • To optimize biasing, set the gate voltage (Vgs) to around 2.5-3.5 V, and the drain voltage (Vds) to around 28-32 V. Adjust the quiescent current (Idq) to 100-200 mA for optimal efficiency. Consult the application note AN1931 for more detailed guidance.
    • Use a 4-layer PCB with a solid ground plane, and ensure the device is mounted on a heat sink with a thermal resistance of <1°C/W. Keep the source and drain pins as short as possible, and use vias to connect the heat sink to the ground plane. Consult the application note AN1931 for more detailed guidance.
    • Handle the device with ESD-protective equipment, such as wrist straps and mats. Use ESD-protected packaging and storage. Avoid touching the device pins, and use a grounded tip when probing or soldering. Consult the application note AN1931 for more detailed guidance.
    • The maximum power handling capability of the BLF888B,112 is 120 W, but it's recommended to operate it at a maximum power of 100 W for optimal reliability and thermal management.
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