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    Part Img BLF888BS,112 datasheet by NXP Semiconductors

    • BLF888BS - UHF power LDMOS transistor, SOT539B Package, Standard Marking, IC'S Tube - DSC Bulk Pack
    • Original
    • Yes
    • Transferred
    • EAR99
    • Find it at Findchips.com

    BLF888BS,112 datasheet preview

    BLF888BS,112 Frequently Asked Questions (FAQs)

    • The maximum operating frequency of the BLF888BS,112 is 3.8 GHz, but it's recommended to operate it at a maximum frequency of 2.7 GHz for optimal performance and reliability.
    • To optimize biasing, set the gate voltage (Vgs) between 2.5 V to 3.5 V, and the drain voltage (Vds) between 24 V to 28 V. Adjust the quiescent current (Idq) to around 100 mA to 200 mA for optimal efficiency.
    • Use a 4-layer PCB with a solid ground plane, and ensure the device is mounted on a heat sink with a thermal resistance of less than 1°C/W. Keep the source and gate pins as close as possible to minimize parasitic inductance.
    • Use ESD protection devices, such as diodes or resistors, on the input and output pins. Handle the device with an ESD wrist strap or mat, and store it in an anti-static bag or container.
    • The maximum power handling capability of the BLF888BS,112 is 120 W, but it's recommended to operate it at a maximum power of 80 W to ensure reliability and prevent overheating.
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