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    Part Img BLF8G20LS-230VJ datasheet by NXP Semiconductors

    • BLF8G20LS-230V - BLF8G20LS-230V - Power LDMOS transistor
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
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    BLF8G20LS-230VJ datasheet preview

    BLF8G20LS-230VJ Frequently Asked Questions (FAQs)

    • NXP provides a recommended PCB layout in the application note AN11570, which includes guidelines for component placement, thermal management, and signal routing to ensure optimal performance and minimize electromagnetic interference (EMI).
    • The input and output matching networks depend on the specific application and frequency band. NXP provides a matching network design tool and guidelines in the application note AN11570 to help engineers design and optimize the matching networks for their specific use case.
    • The BLF8G20LS-230VJ has an operating temperature range of -40°C to +150°C, but the maximum junction temperature (Tj) should not exceed 150°C. Engineers should ensure proper thermal management to prevent overheating and ensure reliable operation.
    • The BLF8G20LS-230VJ has a high power dissipation of up to 20 W. Engineers should ensure proper thermal management by using a heat sink, thermal interface material, and a well-designed PCB layout to dissipate heat effectively and prevent overheating.
    • The BLF8G20LS-230VJ has a human body model (HBM) ESD rating of 2 kV and a machine model (MM) ESD rating of 200 V. Engineers should follow standard ESD handling and protection procedures, such as using ESD-safe equipment, wrist straps, and mats, to prevent damage during handling and assembly.
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