Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    Part Img BLL1214-250,112 datasheet by NXP Semiconductors

    • L-band radar LDMOS transistor - Application: L-band Radar ; Description: L-Band Radar LDMOS RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 50 %; Frequency: 1200 - 1400 MHz; Load power: 250 W; Operating voltage: 36 VDC; Power gain: 13 dB; Pulse width: 1000 us; Package: SOT502A (LDMOST); Container: Blister pack
    • Original
    • Yes
    • Obsolete
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
    • Powered by Findchips Logo Findchips
    • Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

    BLL1214-250,112 datasheet preview

    BLL1214-250,112 Frequently Asked Questions (FAQs)

    • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the layout symmetrical, and use a star-configuration for the power supply connections to minimize noise and EMI.
    • Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure good airflow, and consider using a thermal pad or thermal tape to improve heat dissipation.
    • Monitor the input voltage, output voltage, output current, and temperature. Also, keep an eye on the device's power dissipation, especially during high-load or high-temperature conditions.
    • Use a voltage regulator or a voltage supervisor to ensure the input voltage remains within the recommended range. Add overvoltage protection (OVP) and undervoltage protection (UVP) circuits to prevent damage from voltage transients or faults.
    • Use a low-ESR ceramic capacitor with a value between 10uF to 22uF, depending on the specific application and operating frequency. Ensure the capacitor is rated for the maximum input voltage and operating temperature.
    Supplyframe Tracking Pixel