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    Part Img BTA225B-800B,118 datasheet by NXP Semiconductors

    • Three quadrant triacs high commutation - I<sub>GT</sub>: 50 mA; I<sub>T</sub> (R<sub>MS</sub>): 25 A; V<sub>DRM</sub>: 800 V; Package: SOT404 (D2PAK); Container: Tape reel smd
    • Original
    • Yes
    • Transferred
    • EAR99
    • 8541.30.00.80
    • 8541.30.00.80
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    BTA225B-800B,118 datasheet preview

    BTA225B-800B,118 Frequently Asked Questions (FAQs)

    • NXP recommends a PCB layout with a large copper area connected to the tab of the device to ensure good heat dissipation. A minimum of 2 oz copper thickness is recommended, and the copper area should be connected to a heat sink or a metal plate to further improve thermal performance.
    • To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves for the device. Additionally, ensure good thermal design, use a heat sink if necessary, and avoid exceeding the maximum junction temperature (Tj) of 150°C.
    • The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation and prevent damage to the device.
    • Yes, the BTA225B-800B,118 is suitable for switching inductive loads, but it's essential to ensure that the device is properly snubbed to prevent voltage spikes and oscillations. A suitable snubber circuit should be designed and implemented to protect the device.
    • The recommended fuse rating for overcurrent protection depends on the specific application and the maximum expected current. As a general guideline, NXP recommends a fuse rating of 1.5 to 2 times the maximum expected current to ensure reliable operation and protection of the device.
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