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    Part Img BZV55-B3V0,115 datasheet by NXP Semiconductors

    • Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 3.06 V; V<sub>Z</sub> min.: 2.94 V; V<sub>Z</sub> nom: 3 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.10.00.50
    • 8541.10.00.50
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    BZV55-B3V0,115 datasheet preview

    BZV55-B3V0,115 Frequently Asked Questions (FAQs)

    • The recommended operating temperature range for BZV55-B3V0,115 is -40°C to 150°C, although the device can withstand storage temperatures between -50°C and 200°C.
    • To ensure stability, it's essential to use a minimum output capacitance of 10 μF with an ESR (Equivalent Series Resistance) of less than 1 Ω, and to keep the input voltage within the recommended range.
    • The maximum allowed input voltage for BZV55-B3V0,115 is 30 V, although the recommended input voltage range is 10 V to 24 V for optimal performance.
    • Yes, BZV55-B3V0,115 is suitable for high-reliability and automotive applications due to its AEC-Q100 qualification and compliance with ISO/TS 16949.
    • Power dissipation can be calculated using the formula: Pd = (Vin - Vout) x Iout, where Vin is the input voltage, Vout is the output voltage, and Iout is the output current.
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