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    Part Img BZV55-B3V6,115 datasheet by NXP Semiconductors

    • BZV55-B3V6 - DIODE 3.6 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Voltage Regulator Diode
    • Original
    • Yes
    • Transferred
    • EAR99
    • 8541.10.00.50
    • 8541.10.00.50
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    BZV55-B3V6,115 datasheet preview

    BZV55-B3V6,115 Frequently Asked Questions (FAQs)

    • The recommended operating temperature range for BZV55-B3V6,115 is -40°C to 150°C, although the datasheet specifies a maximum junction temperature of 200°C.
    • To ensure stability, it's essential to follow the recommended layout and decoupling guidelines, use a sufficient output capacitor (e.g., 10uF), and minimize the distance between the regulator and the capacitor.
    • Although the datasheet specifies a maximum input voltage of 30V, it's recommended to limit the input voltage to 25V to ensure reliable operation and prevent damage to the device.
    • While BZV55-B3V6,115 can handle high currents, it's essential to consider the power dissipation and thermal management. The device can handle up to 1A, but the junction temperature should be kept below 150°C to ensure reliability.
    • Power dissipation can be calculated using the formula: Pd = (Vin - Vout) x Iout. It's essential to consider the input voltage, output voltage, and output current to ensure the device operates within its thermal limits.
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