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    Part Img BZV55-C9V1,115 datasheet by NXP Semiconductors

    • Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 250 mA; P<sub>tot</sub>: 500 mW; P<sub>ZSM</sub>: 25 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 9.6 V; V<sub>Z</sub> min.: 8.5 V; V<sub>Z</sub> nom: 9.1 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd
    • Original
    • Yes
    • Transferred
    • EAR99
    • 8541.10.00.50
    • 8541.10.00.50
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    BZV55-C9V1,115 datasheet preview

    BZV55-C9V1,115 Frequently Asked Questions (FAQs)

    • The recommended operating temperature range for BZV55-C9V1,115 is -65°C to 175°C.
    • To ensure reliability, it's essential to follow proper derating guidelines, use a suitable thermal management system, and consider the device's power dissipation and thermal resistance.
    • The maximum allowable power dissipation for BZV55-C9V1,115 is 500 mW. Exceeding this limit can lead to device failure.
    • Yes, BZV55-C9V1,115 can be used in switching regulator applications due to its fast switching speed and low voltage drop. However, ensure proper design and layout considerations to minimize electromagnetic interference (EMI).
    • To prevent ESD damage, handle BZV55-C9V1,115 with proper ESD protection equipment, such as wrist straps, mats, and bags. Also, ensure that the device is stored in a conductive container or bag when not in use.
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