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    Part Img BZX384-B3V0,115 datasheet by NXP Semiconductors

    • Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 2% ; V<sub>Z</sub> max.: 3.06 V; V<sub>Z</sub> min.: 2.94 V; V<sub>Z</sub> nom: 3 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd
    • Original
    • Yes
    • Transferred
    • EAR99
    • 8541.10.00.50
    • 8541.10.00.50
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    BZX384-B3V0,115 datasheet preview

    BZX384-B3V0,115 Frequently Asked Questions (FAQs)

    • The recommended land pattern for BZX384-B3V0,115 can be found in the NXP application note AN11173, which provides guidelines for PCB layout and assembly of SOD323 packaged devices.
    • While the BZX384-B3V0,115 is rated for operation up to 150°C, it's essential to consider the derating of the device's characteristics, such as voltage and current, at higher temperatures. Consult the datasheet and NXP's application notes for guidance on high-temperature operation.
    • To ensure reliability in humid environments, follow proper handling and storage procedures, and consider using moisture-sensitive device (MSD) precautions. Additionally, apply a conformal coating to the PCB to protect the device from moisture ingress.
    • The BZX384-B3V0,115 is a unique device from NXP, but similar devices from other manufacturers include the 1N4728A from ON Semiconductor, the BZT52C3V0 from Diodes Incorporated, and the 1N4728A from Vishay Intertechnology. However, always verify the specifications and characteristics of the alternative device before substitution.
    • While the BZX384-B3V0,115 is a zener diode, it's not suitable for switching power supply applications due to its limited power handling capability and relatively high impedance. Instead, consider using a dedicated switching diode or a more suitable zener diode for high-frequency switching applications.
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