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    Part Img BZX384-C2V4,115 datasheet by NXP Semiconductors

    • Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 300 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 2.6 V; V<sub>Z</sub> min.: 2.2 V; V<sub>Z</sub> nom: 2.4 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd
    • Original
    • Yes
    • Transferred
    • EAR99
    • 8541.10.00.50
    • 8541.10.00.50
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    BZX384-C2V4,115 datasheet preview

    BZX384-C2V4,115 Frequently Asked Questions (FAQs)

    • The recommended land pattern for BZX384-C2V4,115 can be found in the NXP application note AN11173, which provides guidelines for PCB layout and assembly of SOD323 packaged devices.
    • To ensure reliability in high-temperature applications, it's essential to follow the recommended derating curves for voltage and current, and to consider the device's thermal resistance and power dissipation. Additionally, ensure that the PCB design and assembly meet the recommended guidelines for thermal management.
    • While BZX384-C2V4,115 is a general-purpose Zener diode, it's not optimized for high-frequency applications. For high-frequency applications, consider using a Zener diode specifically designed for high-frequency use, such as the BZX79 series.
    • Select the correct BZX384-C2V4,115 variant by considering the required voltage, current, and power dissipation for your application. Refer to the datasheet and consult with NXP's selection guide or application notes for guidance.
    • BZX384-C2V4,115 is a sensitive semiconductor device and requires proper ESD protection and handling. Follow standard ESD handling procedures, such as using an ESD wrist strap, mat, or workstation, and ensure that the device is stored in an ESD-protected environment.
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