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    Part Img CSD16340Q3 datasheet by Texas Instruments

    • CSD16340 - N Channel NexFET Power MOSFET 8-SON -55 to 150
    • Original
    • No
    • Yes
    • Active
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
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    CSD16340Q3 datasheet preview

    CSD16340Q3 Frequently Asked Questions (FAQs)

    • A good PCB layout for the CSD16340Q3 involves keeping the high-current paths short and wide, using multiple vias to connect the thermal pad to a heat sink or a copper plane, and placing decoupling capacitors close to the device. TI provides a recommended PCB layout in the application note SLVAE73.
    • The input capacitor should be selected based on the input voltage, ripple current, and ESR requirements. A ceramic capacitor with a voltage rating of at least 1.5 times the maximum input voltage and a capacitance value between 4.7uF to 10uF is recommended. TI provides a capacitor selection guide in the application note SLVAE73.
    • The CSD16340Q3 has an operating temperature range of -40°C to 150°C. However, the device can be operated up to 175°C for a short duration during startup or fault conditions.
    • The CSD16340Q3 has a built-in overcurrent protection feature that can be enabled by connecting the OC pin to a resistor divider network. The resistor values should be selected based on the desired overcurrent threshold and the input voltage.
    • The recommended gate drive voltage for the CSD16340Q3 is between 4.5V to 15V. A higher gate drive voltage can improve the switching performance, but it may also increase the power consumption.
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