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    Part Img CSD17576Q5BT datasheet by Texas Instruments

    • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 100A 8VSON
    • Original
    • No
    • Yes
    • Active
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
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    CSD17576Q5BT datasheet preview

    CSD17576Q5BT Frequently Asked Questions (FAQs)

    • A good PCB layout for the CSD17576Q5BT involves keeping the input and output traces separate, using a solid ground plane, and minimizing the length of the input traces to reduce noise and parasitic inductance.
    • To ensure proper biasing, connect the VCC pin to a stable voltage source, and the VBIAS pin to a voltage divider that sets the desired bias point. The recommended bias voltage is typically around 1.2V to 1.5V.
    • The maximum power dissipation of the CSD17576Q5BT is around 1.4W. To avoid exceeding this limit, ensure that the device is properly heat-sinked, and the input voltage and current are within the recommended operating conditions.
    • The thermal shutdown feature is designed to protect the device from overheating. If the device exceeds the maximum junction temperature (around 150°C), it will shut down. To handle this, ensure proper heat-sinking, and consider adding thermal monitoring and shutdown circuitry to prevent damage.
    • The recommended input termination scheme is a 50Ω resistor in series with the input, and the recommended output termination scheme is a 50Ω resistor in parallel with the output. This helps to minimize reflections and ensure signal integrity.
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