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    Part Img CSD18537NQ5A datasheet by Texas Instruments

    • CSD18537NQ5A - 60-V N-Channel NexFET Power MOSFET 8-SON -55 to 150
    • Original
    • No
    • Yes
    • Active
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
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    CSD18537NQ5A datasheet preview

    CSD18537NQ5A Frequently Asked Questions (FAQs)

    • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
    • The device requires a stable input voltage (VIN) and a bypass capacitor (CBYP) to ensure proper biasing. A 1-μF ceramic capacitor is recommended for CBYP. Additionally, the input voltage should be filtered to minimize noise and ripple.
    • The maximum allowed power dissipation for the CSD18537NQ5A is 2.5 W. Exceeding this limit may cause the device to overheat and reduce its lifespan.
    • A voltage supervisor or a voltage monitor can be used to detect overvoltage and undervoltage conditions. Additionally, a TVS diode or a zener diode can be used to clamp the input voltage to prevent damage from voltage spikes or surges.
    • The CSD18537NQ5A is designed to operate at frequencies up to 1 MHz. Operating the device at frequencies above 1 MHz may reduce its performance and increase power consumption.
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