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    Part Img CY14B104LA-BA25XI datasheet by Cypress Semiconductor

    • 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
    • Original
    • Yes
    • Transferred
    • 3A991.B.2.A
    • 8542.32.00.41
    • 8542.32.00.40
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    CY14B104LA-BA25XI datasheet preview

    CY14B104LA-BA25XI Frequently Asked Questions (FAQs)

    • The CY14B104LA-BA25XI has an operating temperature range of -40°C to +85°C.
    • It is recommended to power up the VCC supply before the VIO supply, and power down the VIO supply before the VCC supply to prevent latch-up conditions.
    • The recommended clock frequency for the CY14B104LA-BA25XI is up to 104 MHz, but it can operate at frequencies up to 108 MHz with some limitations.
    • The CY14B104LA-BA25XI has a built-in power-fail detection circuit that automatically stores data in the non-volatile memory during power failures or brownouts, ensuring data integrity.
    • The CY14B104LA-BA25XI has a typical write endurance of 1 million cycles per sector, with a minimum of 100,000 cycles per sector.
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