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    Part Img CY14B104NA-BA25XIT datasheet by Cypress Semiconductor

    • 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
    • Original
    • Yes
    • Transferred
    • 3A991.B.2.A
    • 8542.32.00.41
    • 8542.32.00.40
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    CY14B104NA-BA25XIT datasheet preview

    CY14B104NA-BA25XIT Frequently Asked Questions (FAQs)

    • The CY14B104NA-BA25XIT has an operating temperature range of -40°C to +85°C.
    • It is recommended to power up the VCC supply before the VIO supply, and power down the VIO supply before the VCC supply to prevent latch-up conditions.
    • Cypress recommends following the PCB layout and routing guidelines in the datasheet, including using a solid ground plane, minimizing signal trace lengths, and avoiding vias under the device.
    • To ensure a reliable write operation, Cypress recommends using a write enable signal (WEN) to control the write operation, and using a write protect signal (WP) to prevent accidental writes.
    • The CY14B104NA-BA25XIT has a built-in power-fail detection circuit that automatically resets the device during a power failure or brownout condition, preventing data corruption or loss.
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