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    CY7C10612G30-10ZSXIT datasheet by Cypress Semiconductor

    • Integrated Circuits (ICs) - Memory - IC SRAM 16M PARALLEL 54TSOP
    • Original
    • Yes
    • Transferred
    • 3A991.B.2.A
    • 8542.32.00.41
    • 8542.32.00.40
    • Find it at Findchips.com

    CY7C10612G30-10ZSXIT datasheet preview

    CY7C10612G30-10ZSXIT Frequently Asked Questions (FAQs)

    • The CY7C10612G30-10ZSXIT has an industrial temperature range of -40°C to +85°C, making it suitable for use in a wide range of applications.
    • To implement self-refresh mode, set the SREF bit in the Mode Register (MR) to '1'. This will allow the device to automatically refresh the memory array, reducing power consumption when the device is not being accessed.
    • The CY7C10612G30-10ZSXIT supports a maximum clock frequency of 100 MHz, making it suitable for high-speed applications.
    • The device has a built-in Error-Correcting Code (ECC) feature that can detect and correct single-bit errors during write operations. Additionally, the device also has a Write Error Flag (WEF) that can be used to detect write errors.
    • The typical power consumption of the CY7C10612G30-10ZSXIT is around 350 mW (active) and 15 mW (standby) at a frequency of 100 MHz and a supply voltage of 1.8V.
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